4Mbit Ferroelectric Nonvolatile RAM
• Organized as 256Kx16
• Configurable as 512Kx8 Using /UB, /LB
• 100 Trillion (1e14) Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 40MHz
• Advanced High-Reliability Ferroelectric Process

SRAM Compatible
• JEDEC 256Kx16 SRAM Pinout
• 55ns Access Time, 110ns Cycle Time

Advanced Features
• Low VDD Monitor Protects Memory against Inadvertent Writes
• Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules
• No Battery Concerns
• Monolithic Reliability

Low Power Operation
• 2.7V – 3.6V Power Supply
• Low Standby Current using ZZ pin
• 18 mA Active Current

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 44-pin “Green”/RoHS TSOP-II package
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration

Ordering Information
FM22L16-55-TG 55ns access, 44-pin "Green"/RoHS TSOP-II