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Ferroelectric Technology Brief 9/07
09/01/2007
 (129 KB)
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| Ferroelectric Random Access Memory or F-RAM has attributes that make it the ideal nonvolatile memory. It is a true nonvolatile RAM. In the past two years the technology has moved rapidly toward its emergence as a mainstream memory selection. This technology note provides a brief explanation of its operation as well as an overview of the technology development status. |
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Ramtron Green Packaging and Other Environmental Issues
09/01/2006
(140 KB)
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| Ramtron Green Packaging and Other Environmental Issues
and Data Including Regulatory Compliance to RoHS, WEEE, ELV and JIG 9/06 |
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Data Retention Performance of 0.5u F-RAM Products - 4/06
04/01/2006
(25 KB)
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| This document presents retention test data on both 5V and 3V 0.5u products. Data retention can be predicted based on accelerated testing. The results support the change to the retention specification from 10 to 45 years. |
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Endurance of 0.5u FRAM Products
06/01/2005
(85 KB)
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| FRAM is also known for its high endurance, a fast write speed, and low power consumption. Endurance is defined as the ability of the device to sustain switchable polarization after many switching cycles. It is one of the critical performance characteristics for FRAM applications. Due to the high endurance of FRAM devices, evaluating the endurance behavior in a reasonable amount of time becomes difficult. |
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